Title:
MEMS design using the Fi nite Integration Technique
Author(s):
Emmanuel Leroux, Leonardo Sassi, Anna Karvonen
Source:
MEMSWAVE 2006
Vol./Issue/Date:
Year:
2006
Page(s):
Keywords:
Abstract:
In this paper the Finite Integration Technique (FIT) is used to calculate the S-parameters of MEMS.
First, a MEMS Up/On case is analyzed. The simulations
are carried out in Time Domain on hexahedral mesh; in
frequency domain on tetrahedral mesh and in Frequency
Domain on hexahedral mesh. This is to compare the performance of the different methods with respect to
simulation time.
Then an RF MEMS variable capacitor, consisting of two
MEMS bridges, is simulated with the FIT approach in the
Time Domain and the results then compared with actual
measurements.
Document:
Reference Id:
172
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