Backside-configured surface plasmonic structure with over 40 times photocurrent enhancement
Guiru Gu, Jarrod Vaillancourt, Puminun Vasinajindakaw, Xuejun Lu
IOP science - Semiconductor Science and Technology
Volume: 28, Issue: 10, 31 July 2013
In this paper, we report a quantum dot infrared photodetector (QDIP) enhanced by a backside-configured surface plasmonic structure with an over 40 times peak photocurrent enhancement. The QDIP enhancement by the backside-configured plasmonic structure is
compared with that by the top-configured plasmonic structure. The backside-configured plasmonic structure shows much higher photocurrent and photodetectivity D* enhancement. We analyze the excitation of the surface plasmonic waves by the backside-configured and top-configured plasmonic structures. The higher enhancement is attributed to the more efficient surface plasmonic excitation by the backside-configured plasmonic structure.
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