CST – Computer Simulation Technology

Backside-configured surface plasmonic structure with over 40 times photocurrent enhancement
Guiru Gu, Jarrod Vaillancourt, Puminun Vasinajindakaw, Xuejun Lu
IOP science - Semiconductor Science and Technology
Volume: 28, Issue: 10, 31 July 2013
In this paper, we report a quantum dot infrared photodetector (QDIP) enhanced by a backside-configured surface plasmonic structure with an over 40 times peak photocurrent enhancement. The QDIP enhancement by the backside-configured plasmonic structure is compared with that by the top-configured plasmonic structure. The backside-configured plasmonic structure shows much higher photocurrent and photodetectivity D* enhancement. We analyze the excitation of the surface plasmonic waves by the backside-configured and top-configured plasmonic structures. The higher enhancement is attributed to the more efficient surface plasmonic excitation by the backside-configured plasmonic structure.

Back to References

contact support

Your session has expired. Redirecting you to the login page...

We use cookie to operate this website, improve its usability, personalize your experience, and track visits. By continuing to use this site, you are consenting to use of cookies. You have the possibility to manage the parameters and choose whether to accept certain cookies while on the site. For more information, please read our updated privacy policy

Cookie Management

When you browse our website, cookies are enabled by default and data may be read or stored locally on your device. You can set your preferences below:

Functional cookies

These cookies enable additional functionality like saving preferences, allowing social interactions and analyzing usage for site optimization.

Advertising cookies

These cookies enable us and third parties to serve ads that are relevant to your interests.