CST – Computer Simulation Technology

Title:
MEMS design using the Fi nite Integration Technique
Author(s):
Emmanuel Leroux, Leonardo Sassi, Anna Karvonen
Source:
MEMSWAVE 2006
Vol./Issue/Date:
1st January 0001
Year:
2006
Abstract:
In this paper the Finite Integration Technique (FIT) is used to calculate the S-parameters of MEMS. First, a MEMS Up/On case is analyzed. The simulations are carried out in Time Domain on hexahedral mesh; in frequency domain on tetrahedral mesh and in Frequency Domain on hexahedral mesh. This is to compare the performance of the different methods with respect to simulation time. Then an RF MEMS variable capacitor, consisting of two MEMS bridges, is simulated with the FIT approach in the Time Domain and the results then compared with actual measurements.
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